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  Datasheet File OCR Text:
 S9014
NPN General Purpose Transistors
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0V d c, I C=0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 45 50 5.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc
WEITRON
http://www.weitron.com.tw
S9014
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min
WEITRON
Max Unit
On Characteristics
DC Current Gain (IC= 1mAdc, VCE=5Vdc) Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Transition Frequency (IC= 10 mAdc, VCE= 5 Vdc, f=30MHz) HFE VCE(sat) 60 1000
-
-
0.3
Vdc
VBE(sat)
-
1
Vdc
fT
150
-
MHz
CLASSIFICATION OF hFE Rank
Range
A 60-150
B 100-300
C 200-600
D 400-1000
WEITRON
http://www.weitron.com.tw
S9014
FIG.1
FIG.2
FIG.3
FIG.4
WEITRON
http://www.weitron.com.tw
S9014
unit:mm
TO-92 Outline Dimensions
E
TO-92
H
C
J K
G
Dim A B C D E G H J K L
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
WEITRON
http://www.weitron.com.tw
D
A


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